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| FDP8447L N-Channel PowerTrench(R) MOSFET May 2007 FDP8447L N-Channel PowerTrench(R) MOSFET 40V, 50A, 8.7m Features Max rDS(on) = 8.7m at VGS = 10V, ID = 14A Max rDS(on) = 11.2m at VGS = 4.5V, ID = 11A Fast Switching RoHS Compliant tm General Description This N-Channel MOSFET has been produced using Fairchild Semiconductor's proprietary PowerTrench technology to deliver low rDS(on) and optimized BVDSS capability to offer superior performance benefit in the application. Applications Inverter Power Supplies D G G D S TO-220 FDP Series S MOSFET Maximum Ratings TC = 25C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Drain-Source Avalanche Energy Power Dissipation Power Dissipation TC = 25C TA = 25C (Note 1) (Note 3) TC = 25C TC = 25C TA = 25C (Note 1) Ratings 40 20 50 65 12 100 153 60 2 -55 to +150 mJ W C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1) 2.1 62.5 C/W Package Marking and Ordering Information Device Marking FDP8447L Device FDP8447L Package TO-220AB Reel Size Tube Tape Width N/A Quantity 50units (c)2007 Fairchild Semiconductor Corporation FDP8447L Rev.B 1 www.fairchildsemi.com FDP8447L N-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250A, VGS = 0V ID = 250A, referenced to 25C VDS = 32V, VGS = 20V, VDS = 0V 40 34 1 100 V mV/C A nA On Characteristics VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A ID = 250A, referenced to 25C VGS = 10V, ID = 14A VGS = 4.5V, ID = 11A VGS = 10V, ID = 14A, TJ = 125C VDD = 5V, ID = 14A 1 1.7 -6 7.7 8.9 12.1 74 8.7 11.2 13.7 S m 3 V mV/C Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 20V, VGS = 0V, f = 1MHz f = 1MHz 1880 245 150 1.4 2500 325 225 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Charge Gate to Drain "Miller" Charge VGS = 0V to 10V VGS = 0V to 5V VDD = 20V, ID = 14A VDD = 20V, ID = 14A, VGS = 10V, RGEN = 6 9 7 28 4 35 19 4.7 6.2 18 14 45 10 49 27 ns ns ns ns nC nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 14A (Note 2) 0.8 28 22 1.2 42 33 V ns nC IF = 14A, di/dt = 100A/s NOTES: 1. RJA is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RJA is determined by the user's board design. 2. Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. 3. Starting TJ = 25C, L = 1mH, IAS = 17.5A, VDD = 40V, VGS = 10V. (c)2007 Fairchild Semiconductor Corporation FDP8447L Rev.B 2 www.fairchildsemi.com FDP8447L N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 100 80 ID, DRAIN CURRENT (A) VGS = 10V VGS = 4.5V VGS = 4V VGS = 3.5V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 3.0 VGS = 3V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 2.5 VGS = 3.5V 60 40 20 2.0 1.5 1.0 VGS = 4.5V VGS = 10V VGS = 4V VGS = 3V 0 0 0.5 0 20 40 60 80 100 ID, DRAIN CURRENT(A) 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 20 SOURCE ON-RESISTANCE (m) 1.8 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.6 1.4 1.2 1.0 0.8 0.6 -50 ID = 14A VGS = 10V ID = 7A PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 16 TJ = 125oC rDS(on), DRAIN TO 12 8 TJ = 25oC 4 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 150 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature 100 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX Figure 4. On-Resistance vs Gate to Source Voltage 100 VGS = 0V 80 ID, DRAIN CURRENT (A) VDS = 5V 10 1 0.1 0.01 TJ = -55oC 60 40 TJ = 25oC TJ = 125oC TJ = 25oC 20 0 1 TJ = 125oC TJ = -55oC 2 3 4 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current (c)2007 Fairchild Semiconductor Corporation FDP8447L Rev.B 3 www.fairchildsemi.com FDP8447L N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 10 VGS, GATE TO SOURCE VOLTAGE(V) ID = 14A VDD = 10V VDD = 20V CAPACITANCE (pF) 10000 Ciss 8 VDD = 30V 1000 Coss 6 4 2 0 0 10 20 Qg, GATE CHARGE(nC) 100 f = 1MHz VGS = 0V Crss 30 40 10 0.1 1 10 40 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 80 ID, DRAIN CURRENT (A) 20 IAS, AVALANCHE CURRENT(A) 10 TJ = 25oC 60 VGS = 10V 40 Limited by Package VGS = 4.5V TJ = 125oC 20 RJC = 2.1 C/W o 1 0.01 0.1 1 10 100 300 0 25 50 75 100 o 125 150 tAV, TIME IN AVALANCHE(ms) TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 300 P(PK), PEAK TRANSIENT POWER (W) Figure 10. Maximum Continuous Drain Current vs Case Temperature 1000 VGS = 10V SINGLE PULSE RJC = 2.1oC/W TC = 25oC 100 ID, DRAIN CURRENT (A) 100us 10 THIS AREA IS LIMITED BY rDS(on) 1 SINGLE PULSE TJ = MAX RATED RJC = 2.1oC/W TC = 25oC 1ms 10ms 100ms 100 0.1 0.1 1 10 100 50 -4 10 10 -3 10 -2 10 -1 10 0 10 1 VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (s) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation (c)2007 Fairchild Semiconductor Corporation FDP8447L Rev.B 4 www.fairchildsemi.com FDP8447L N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 2 DUTY CYCLE-DESCENDING ORDER 1 NORMALIZED THERMAL IMPEDANCE, ZJC D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.1 SINGLE PULSE RJC = 2.1 C/W o t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 0.05 -4 10 10 -3 10 -2 10 -1 10 0 10 1 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve (c)2007 Fairchild Semiconductor Corporation FDP8447L Rev.B 5 www.fairchildsemi.com FDP8447L N-Channel PowerTrench(R) MOSFET tm TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Across the board. Around the worldTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM DOMETM E2CMOSTM EcoSPARK(R) EnSignaTM FACT Quiet SeriesTM FACT(R) FAST(R) FASTrTM FPSTM FRFET(R) GlobalOptoisolatorTM GTOTM HiSeCTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM MICROCOUPLERTM MicroPakTM MICROWIRETM Motion-SPMTM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANAR(R) PACMANTM PDP-SPMTM POPTM Power220(R) Power247(R) PowerEdgeTM PowerSaverTM Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM ScalarPumpTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM The Power Franchise(R) TM TinyBoostTM tm TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyWireTM TruTranslationTM SerDesTM UHC(R) UniFETTM VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PRODUCT STATUS DEFINITIONS Definition of Terms 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor.The datasheet is printed for reference information only. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production Rev. I27 (c)2007 Fairchild Semiconductor Corporation FDP8447L Rev.B www.fairchildsemi.com |
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